Get a Quote for 202340-001 NSN Part by Bae Systems Information And Electronic Systems Integration I

Part Number: 202340-001

Alternate P/N: 202340001

Manufacturer: bae systems information and electronic systems integration i

NSN: 5962-01-079-7736

Item Name : microcircuit memory

CAGE Code: 81413

FSC: 5962 Microcircuits Electronic

Fill out a request for quote form below and receive a competitive quote for Part Number 202340-001 with NSN 5962-01-079-7736, manufactured by Bae Systems Information And Electronic Systems Integration I. This Microcircuit Memory NSN Part 202340-001 with and cage code 81413, is currently available for purchase, and with our Instant RFQ service, you can obtain a personalized quote within 15 minutes or less.

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NSN Information for Part Number 202340-001 with NSN 5962-01-079-7736, 5962010797736

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-079-7736 Item Description: Microcircuit Memory	5962	010797736	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
202340-001	1	2	3

Characteristics Data of NSN 5962-01-079-7736, 5962010797736

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND WDECODED OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN13 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC650 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 650 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81413-202340 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT